Transistor
2SC3354
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
4.0鹵0.2
3.0鹵0.2
0.7鹵0.1
s
Features
q
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
50
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common base reverse transfer capacitance
Common emitter reverse transfer capacitance
Transition frequency
Power gain
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE
V
BE
C
rb
C
re
f
T*
PG
Conditions
I
C
= 100碌A, I
E
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA
V
CE
= 6V, I
C
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?5mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 100MHz
600
min
30
3
25
720
0.8
1
1200
17
1.5
1600
250
mV
pF
pF
MHz
dB
typ
max
Unit
V
V
*
h
FE
Rank classification
T
600 ~ 1300
S
900 ~ 1600
Rank
f
T
(MHz)
2.0鹵0.2
marking
+0.2
0.45鈥?.1
s
Absolute Maximum Ratings
(Ta=25藲C)
15.6鹵0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
High transition frequency f
T
.
1
1
2
3
4
