Transistor
2SC3313
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
4.0鹵0.2
s
Features
q
q
q
0.7鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Common emitter reverse transfer capacitance
Reverse transfer impedance
Transition frequency
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
C
re
Z
rb
f
T
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
150
250
min
30
20
5
70
250
1.6
60
pF
鈩?/div>
MHz
typ
max
Unit
V
V
V
*
h
FE
Rank classification
B
70 ~ 160
C
110 ~ 250
h
FE
Rank
2.0鹵0.2
marking
+0.2
0.45鈥?.1
s
Absolute Maximum Ratings
(Ta=25藲C)
15.6鹵0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
Optimum for RF amplification of FM/AM radios.
3.0鹵0.2
1
1
2
