鈭?/div>
2.0
max
60
typ
200
typ
V
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1303)
(Ta=25擄C)
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
Unit
碌
A
碌
A
19.9
鹵0.3
4.0
V
a
b
酶3.2
鹵0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
鈭梙
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(鈩?
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.5
I
B2
(A)
鈥?.5
t
on
(
碌
s)
0.2typ
t
stg
(
碌
s)
1.5typ
t
f
(
碌
s)
0.35typ
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
0m
4
A
00m
300
mA
V
CE
(sat) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l t a g e V
CE( sa t)
(V )
3
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
14
( V
C E
=4 V )
14
A
0m
60
mA
0
50
12
75
A
200m
C ol l e c t o r C ur r en t I
C
( A)
A
C o l l e c t o r C u r r e n t I
C
( A)
150mA
10
2
8
10 0m A
25
藲C
I
B
=20mA
12
5藲C
I
C
= 1 0A
5A
0
0
0
0
1
2
3
4
0
0.2
0 .4
0.6
0 .8
1. 0
0
鈥?0
1
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
藲C
(Ca
se
(C
as
4
eT
1
em
50m A
5
Tem
p)
p)
2
Co l le ct o r -Em i t t er V ol tag e V
C E
(V )
Bas e C ur r en t I
B
( A)
(V
CE
=4 V )
200
D C C u rr en t G ai n h
FE
D C Cu r r en t G a i n h
FE
200
12 5 藲 C
100
100
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j -a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
3
Typ
25 藲 C
鈥?30 藲 C
1
0.5
50
50
20
0.02
0.1
0.5
1
5
10 14
20
0.02
0 .1
0 .5
1
5
10 14
0.1
1
10
100
Time t(ms)
10 0 0 2 00 0
Co l l ect o r C u rren t I
C
( A)
C o ll e ct o r Cu r r e n t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
( V
C E
=1 2 V )
80
40
Safe Operating Area
(Single Pulse)
1 30
1m
10
Pc 鈥?Ta Derating
s
Cut- off Fr eq u e n c y f
T
( M H
Z
)
Typ
60
Co lle cto r Cu r re n t I
C
( A )
10
5
10
s
0m
Ma x imu m Po we r D i s s i p a t i o n P
C
(W )
m
D
s
1 00
W
ith
C
In
fin
ite
he
40
at
si
nk
50
1
0 .5
Without Heatsink
Natural Cooling
20
0
鈥?. 02
鈥?0. 1
鈥?
鈥?0
0 .2
3
10
1 00
2 00
Em i t t er C urre nt I
E
(A )
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
3. 5
0
W i t ho u t He a t s i nk
0
25
50
75
100
125
150
Am b i e n t T e m p er at u r e T a ( 藲 C )
65
SANKEN
1
