鈭?/div>
2.0
max
60
typ
250
typ
V
MHz
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1295)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3264
230
230
5
17
5
200(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=230V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
External Dimensions
MT-200
36.4
鹵0.3
24.4
鹵0.2
2-酶3.2
鹵0.1
9
7
21.4
鹵0.3
2.1
6.0
鹵0.2
Unit
碌
A
碌
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
鹵0.1
B
C
E
5.45
鹵0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
鈭梙
FE
Rank O(50 to 100), Y(70 to 140)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(鈩?
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.5
I
B2
(A)
鈥?.5
t
on
(
碌
s)
0.30typ
t
stg
(
碌
s)
2.40typ
t
f
(
碌
s)
0.50typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
3.
0A
2.
0A
V
C E
( sat ) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
CE(sa t)
(V )
3
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
( V
CE
= 4V )
17
15
17
1.5
A
1.0
A
A
15
C o l l ec to r C u r r e n t I
C
( A )
400m
10
A
2
C o l l e c t o r Cu r r e n t I
C
( A)
600m
200m
A
10
p)
eT
em
5
I
B
=20mA
0
5A
0
0
0
1
2
3
4
0
0. 5
1 .0
1.5
2. 0
0
25藲C
鈥?0藲
C (C
125
藲C (
50mA
I
C
= 10 A
5
Cas
1
ase
1
Tem
100mA
p)
2
3
C ol l ec t or - Emi t t er Vo l t ag e V
C E
(V )
Ba se Cu r r e nt I
B
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= 4 V )
200
DC C ur r e nt Ga i n h
F E
D C Cu r r en t G a i n h
FE
200
12 5藲 C
100
100
50
( V
C E
= 4V)
Transient Thermal Resistance
胃
j -a
( 藲C / W )
h
F E
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
3
Typ
50
2 5藲 C
鈥? 0藲 C
1
0.5
10
10
0.02
0.1
0.5
1
5
10 17
0 .0 2
0. 1
0.5
1
5
10 1 7
0.1
1
10
100
Time t(ms)
1 0 00 2 0 0 0
C ol l e ct or Cu rre nt I
C
(A)
C ol l ec t or C ur r en t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
( V
CE
= 1 2 V )
100
40
Safe Operating Area
(Single Pulse)
2 00
10
m
Pc 鈥?Ta Derating
80
Cu t-o ff Freq u e n c y f
T
(M H
Z
)
M ax im um P o wer Di s s i p a t i o n P
C
( W )
s
10
DC
1 60
W
ith
Typ
60
Co llec to r C ur r e n t I
C
( A )
5
In
fin
1 20
ite
he
at
si
nk
40
1
0.5
Without Heatsink
Natural Cooling
80
20
40
0
鈥?.02
0.1
鈥?0. 1
鈥?
鈥?0
3
10
10 0
30 0
Em i t t er C urren t I
E
(A )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
5
0
W i t h ou t H ea t s i n k
0
25
50
75
10 0
125
150
A m b i e n t T em p e r at u r e T a ( 藲 C )
64
SANKEN
1
