2SC3179
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1262)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3179
80
60
6
4
1
30(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
2.5
B C E
Application :
Audio and General Purpose
(Ta=25擄C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=80V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=1V
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=鈥?.2A
V
CB
=10V, f=1MHz
100
max
100
max
60
min
40
min
0.6
max
15
typ
60
typ
External Dimensions
MT-25(TO220)
3.0
鹵0.2
10.2
鹵0.2
4.8
鹵0.2
2.0
鹵0.1
2SC3179
Unit
碌
A
碌
A
V
V
pF
12.0min
16.0
鹵0.7
8.8
鹵0.2
a
b
酶3.75
鹵0.2
4.0max
MHz
1.35
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(鈩?
10
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
200
I
B2
(mA)
鈥?00
t
on
(
碌
s)
0.2
typ
t
stg
(
碌
s)
1.9
typ
t
f
(
碌
s)
0.29
typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o l t a ge V
CE(sa t)
( V )
4
0
10
m
A
80m
A
V
C E
( sat ) 鈥?I
B
Characteristics
(Typical)
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
4
(V
CE
= 4V )
I
B
=
60mA
C o l l e c to r C u r r e n t I
C
( A )
40mA
30mA
2
20mA
C o l l e c t or C u r r e n t I
C
( A)
3
1.0
3
2
p)
mp
)
Te
Ca
se
C(
em
se
T
(C
a
12
25藲
I
C
= 1 A
0
0
1
2
3
4
0
0.005 0.01
0.05
0.1
0.5
1
0
0.4
0.6
0. 8
鈥?0
藲C
2A
5藲C
1
10mA
1
(Ca
3A
se
Te
0.5
mp
)
1.0
1.2
C ol l ec t or - Emi tte r V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( A)
Ba s e - E m i t t or V o l t a ge V
B E
( V )
(V
C E
=4 V)
500
D C Cu rr en t Ga i n h
FE
DC Cu r r e n t Ga i n h
FE
200
1 25 藲 C
100
2 5藲 C
鈥? 0藲 C
50
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j -a
(藲 C/ W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
5
Typ
100
50
1
20
0.01
0.1
0 .5
1
4
20
0 .0 2
0 .1
0 .5
1
4
0.5
1
10
Time t(ms)
1 00
1 0 00
C ol l e ct or C u rre nt I
C
(A)
C ol l e ct or C u r r e nt I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
40
(V
C E
= 1 2 V )
10
Safe Operating Area
(Single Pulse)
30
1m
Pc 鈥?T a Derating
5
Cu t-o ff Fre qu en c y f
T
(M H
Z
)
30
Co lle cto r C ur re n t I
C
( A )
D
C
M a xi mu m Po we r D is s i p a t i o n P
C
( W )
10
m
10
0m
s
s
s
W
ith
20
In
fin
ite
he
20
Typ
at
si
nk
1
10
10
0.5
Without Heatsink
Natural Cooling
W i th o u t H e a t s i n k
2
0
鈥?.005 鈥?.01
0.2
鈥?0. 1
鈥?0.5 鈥?
鈥?
3
10
50
1 00
Emi t t e r Cu rren t I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
0
0
25
50
75
1 00
125
150
A m b i en t T e m p e r a tu r e T a ( 藲 C )
62
SANKEN
1
