Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
2.8
鈥?.3
+0.2
s
Features
q
q
0.65鹵0.15
+0.25
1.5
鈥?.05
0.65鹵0.15
0.95
q
High transition frequency f
T
.
Small collector output capacitance C
ob
and common base reverse
transfer capacitance C
rb
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
3
0.4
鈥?.05
+0.1
2
1.45
+0.2
1.1
鈥?.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
3
50
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
1S
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
h
FE
ratio
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
r
bb
' 路 C
C
C
rb
鈭唄
FE
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CE
= 4V, I
C
= 100碌A
V
CE
= 4V, I
C
= 5mA
0.75
1.4
1.9
1.4
11
0.45
1.6
10
3
75
200
400
0.5
2.5
V
GHz
pF
ps
pF
min
typ
max
1
Unit
碌A
V
V
*
h
FE
Rank classification
Rank
h
FE
P
75 ~ 130
1SP
Q
110 ~ 220
1SQ
R
200 ~ 400
1SR
Marking Symbol
0 to 0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.1
1
1
2
