2SC2922
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
MT-200
CONDITIONS
V
BE
= 0V
TYP
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
T
mb
25
I
C
= 8.0A; I
B
= 0.8A
I
F
= 8.0A
I
C
=8A,I
B1
=-I
B2
=1A,V
CC
=40V
-
-
-
-
-
-
1.5
0.45
MAX
180
180
17
200
3
2.0
1.0
UNIT
V
V
A
A
W
V
V
s
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-55
-
Tmb 25
MAX
180
180
5
17
5
200
150
150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=180V
V
EB
=5V
I
C
=1mA
I
C
= 8A; I
B
= 0.8A
I
C
= 2A; V
CE
= 5V
I
C
= 2A; V
CE
= 12V
V
CB
= 10V,f=1MHZ
I
C
=8A.I
B1
=-I
B2
=1A,V
CC
=40V
I
C
=8A.I
B1
=-I
B2
=1A,V
CC
=40V
I
C
=8A.I
B1
=-I
B2
=1A,V
CC
=40V
TYP
-
-
180
-
50
10
250
0.2
1.5
0.45
MAX
0.2
0.2
2
200
-
-
UNIT
mA
mA
V
MHz
pF
us
us
us
1.0
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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