鈭?/div>
2.0
max
50
typ
250
typ
V
MHz
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1216)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC2922
180
180
5
17
5
200(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=180V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=8V
I
C
=8A, I
B
=0.8A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
External Dimensions
MT-200
36.4
鹵0.3
24.4
鹵0.2
2-酶3.2
鹵0.1
9
7
21.4
鹵0.3
2.1
6.0
鹵0.2
Unit
碌
A
碌
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
鹵0.1
B
C
E
5.45
鹵0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
鈭梙
FE
Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(鈩?
4
I
C
(A)
10
V
B2
(V)
鈥?
I
B1
(A)
1
I
B2
(A)
鈥?
t
on
(
碌
s)
0.2typ
t
stg
(
碌
s)
1.3typ
t
f
(
碌
s)
0.45typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
鈥?V
C E
Characteristics
(Typical)
1.5
1A
V
CE
(sat ) 鈥?I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t er S a t ur at i on Vo l ta g e V
CE(s at)
(V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
17
15
( V
CE
= 4 V )
17
A
70
A
0m
15
mA
600
mA
500
A
400m
300
mA
A
C ol l e c t o r C u r r e nt I
C
( A )
200m
2
Co l l e c t o r Cu r r e n t I
C
( A)
10
10
em
p)
as
(C
5藲C
100 mA
1
藲C
0
0
1
2
3
4
0
0
0.2
0. 4
0 .6
0.8
1.0
0
0
25
1
B as e- Em i t t or V o l t a g e V
BE
( V )
鈥?0
I
B
=20mA
藲C
12
5A
(Ca
50mA
se
5
5
Tem
eT
I
C
= 10 A
p)
2
2.4
Co l le ct o r -Em i t t er V ol tag e V
C E
(V)
Ba se Cu r r e nt I
B
( A)
(V
C E
=4 V )
200
DC C ur r e nt Ga i n h
FE
DC Cu r r e n t Ga i n h
FE
200
12 5藲 C
100
2 5藲 C
50
鈥?30 藲 C
( V
C E
= 4 V)
Transient Thermal Resistance
胃
j-a
(藲 C/ W )
h
F E
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
2
100
1
Typ
50
0.5
10
0.02
0.1
0. 5
1
5
10
17
10
0.02
0.1
0 .5
1
5
1 0 17
0.1
1
10
10 0
Time t(ms)
10 0 0
2 00 0
Co l le ct o r Curre nt I
C
(A )
C ol l e ct or C u r r e nt I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
50
Safe Operating Area
(Single Pulse)
20 0
Pc 鈥?Ta Derating
Ma x im um P ow er Di s s i p a t i o n P
C
( W )
10
m
s
Cut- off Fr eq u e n c y f
T
( M H
Z
)
16 0
60
Co llec to r C ur r e n t I
C
( A )
Typ
10
5
DC
W
ith
In
fin
12 0
ite
he
40
at
si
nk
80
1
0.5
Without Heatsink
Natural Cooling
20
40
W i th o u t H e a t s i n k
0
25
50
75
100
1 25
1 50
0
鈥?.02
0.2
鈥? . 1
鈥?
鈥?
鈥?0
2
10
1 00
3 00
Em i t t er C urren t I
E
(A)
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V )
5
0
Am b i e n t T e m pe r a t u r e T a( 藲 C)
61
SANKEN
1
