2SC2880
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC2880
High Voltage Switching Applications
路
路
路
路
路
High voltage: V
CEO
= 150 V
High transition frequency: f
T
= 120 MHz
Small flat package
P
C
= 1.0 to 2.0 W (mounted on ceramic substrate)
Complementary to 2SA1200
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
2
Rating
200
150
5
50
10
500
800
150
鈭?5
to 150
Unit
V
V
V
mA
mA
PW-MINI
mW
JEDEC
JEITA
鈥?/div>
SC-62
2-5K1A
擄C
擄C
TOSHIBA
Weight: 0.05 g (typ.)
Note 1: Mounted on ceramic substrate (250 mm 脳 0.8 t)
1
2002-08-13
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