鈭?/div>
2.0
max
70
typ
60
typ
V
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1186)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC2837
150
150
5
10
2
100(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=3V
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=鈥?A
V
CB
=80V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
Unit
碌
A
碌
A
19.9
鹵0.3
4.0
V
a
b
酶3.2
鹵0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
鈭梙
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(鈩?
12
I
C
(A)
5
V
B2
(V)
鈥?
I
B1
(mA)
500
I
B2
(mA)
鈥?00
t
on
(
碌
s)
0.2typ
t
stg
(
碌
s)
1.4typ
t
f
(
碌
s)
0.35typ
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
400
8
C ol l e c t o r C ur r en t I
C
( A)
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l t a g e V
CE( sa t)
(V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
10
( V
C E
=4 V )
10
mA
30
0mA
200m
A
8
C o l l e c t o r C u r r e n t I
C
( A)
160m
6
A
120mA
2
6
80m A
as
eT
1
12
藲C
0
0
1
2
3
4
0
0
0 .5
1.0
Ba s e C ur r en t I
B
( A)
1 .5
2 .0
0
0
鈥?0
25
1
Ba s e - E m i t to r V ol t ag e V
B E
( V)
藲C
5A
5藲C
2
2
(Ca
I
B
=20mA
(C
se
Tem
I
C
= 1 0 A
em
40m A
p)
4
4
p)
2
Co l le ct o r -Em i t t er V ol tag e V
C E
(V )
(V
C E
=4 V )
200
D C C ur re nt Ga i n h
F E
DC C ur r e nt Ga i n h
F E
( V
C E
= 4 V)
200
1 25 藲 C
Transient Thermal Resistance
胃
j -a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
3
100
Typ
100
25 藲 C
鈥? 0藲 C
1
50
50
0.5
20
0.02
0. 1
1
C o ll e ct o r C urr en t I
C
(A)
10
20
0 .0 2
0.05
0.1
0. 5
1
5
10
0.2
1
10
10 0
Time t(ms)
1 0 00 2 0 0 0
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
120
(V
C E
=12 V )
30
Safe Operating Area
(Single Pulse)
100
10
Pc 鈥?Ta Derating
100
C ut- off Fr eq u e n c y f
T
( M H
Z
)
10
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
m
s
W
Typ
80
Co lle cto r Cu r re n t I
C
( A )
D
ith
C
In
5
fin
ite
he
60
50
at
si
nk
40
1
Without Heatsink
Natural Cooling
20
0.5
0
鈥?.02
0.2
鈥? . 1
鈥?
鈥?
2
10
1 00
2 00
Emi t t e r Curre nt I
E
(A )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
3.5
0
W i th o u t H e a t s i n k
0
25
50
75
1 00
125
150
A m b i en t T e m p e r a t ur e T a ( 藲 C )
59
SANKEN
1
