Transistor
2SC2778
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.8
鈥?.3
+0.2
s
Features
q
+0.2
0.65鹵0.15
+0.25
1.5
鈥?.05
0.65鹵0.15
1.9鹵0.2
q
2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
5
30
200
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
+0.2
1.1
鈥?.1
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
K
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
30
20
5
70
150
230
1.3
250
MHz
pF
typ
max
Unit
V
V
V
*
h
FE
Rank classification
Rank
h
FE
B
70 ~ 160
KB
C
110 ~ 250
KC
Marking Symbol
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.1
0.4
鈥?.05
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
0.95
3
+0.1
1.45
1
1
2
3
