Transistor
2SC2647
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
q
q
Features
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0鹵0.1
R
0.
0.85
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
5
30
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
f
T
C
re
Z
rb
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?mA
min
30
20
5
70
150
230
1.3
1.6
60
250
MHz
pF
鈩?/div>
typ
max
Unit
V
V
V
*
h
FE
Rank classification
B
70 ~ 160
C
110 ~ 250
h
FE
Rank
4.1鹵0.2
4.5鹵0.1
7
1
1
2
3
