Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
Features
q
q
1.5 R0.9
R0.9
High transition frequency f
T
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.4
1.0鹵0.1
R
0.
0.85
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
50
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Power gain
Common base reverse transfer capacitance
Common emitter reverse transfer capacitance
Base time constant
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE
V
BE
f
T*
PG
C
rb
C
re
r
bb
' 路 C
C
Conditions
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?5mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 31.9MHz
600
min
30
3
25
720
1200
20
0.8
1.5
25
1600
mV
MHz
dB
pF
pF
ps
typ
max
Unit
V
V
*
f
T
Rank classification
Rank
f
T
T
600 ~ 1300
S
900 ~ 1600
1.25鹵0.05
s
Absolute Maximum Ratings
(Ta=25藲C)
0.55鹵0.1
0.45鹵0.05
4.1鹵0.2
4.5鹵0.1
7
1