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DATA SHEET

NPN SILICON TRANSISTOR

2SC2570A

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.

FEATURES

鈥?Low noise and high gain

鈥?Wide dynamic range

: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V

CE

= 10 V, I

C

= 5.0 mA

: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V

CE

= 10 V, I

C

= 15 mA

ORDERING INFORMATION

Part Number

2SC2570A

2SC2570A-T

Quantity

Loose products (500 pcs)

Taping products (Box type) (2 500 pcs)

Remark

To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).

ABSOLUTE MAXIMUM RATINGS (T

A

= +25 擄C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

T

stg

Ratings

25

12

3.0

70

600

150

鈥?5 to +150

Unit

V

V

V

mA

mW

擄C

擄C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P10404EJ3V0DS00 (3rd edition)

Date Published November 1999 N CP(K)

Printed in Japan

漏

1980, 1999

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