2SC2458(L)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458(L)
Audio Amplifier Applications
Low Noise Audio Amplifier Applications
路
路
路
路
路
路
High current capability: I
C
= 150 mA (max)
High DC current gain: h
FE
= 70~700
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
Complementary to 2SA1048 (L).
Small package.
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
150
50
200
125
-55~125
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-4E1A
Weight: 0.13 g (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF (1)
Noise figure
NF (2)
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA, f
=
100 Hz,
R
G
=
10 kW
V
CE
=
6 V, I
C
=
0.1 mA, f
=
1 kHz,
R
G
=
10 kW
Min
戮
戮
70
戮
80
戮
戮
戮
Typ.
戮
戮
戮
0.1
戮
2.0
0.5
0.2
Max
0.1
0.1
700
0.25
戮
3.5
6
dB
3
V
MHz
pF
Unit
mA
mA
Note: h
FE
classification
O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2003-03-27
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