Transistor
2SC2405, 2SC2406
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1034 and 2SA1035
Unit: mm
s
Features
q
q
q
2.9
鈥?.05
Parameter
Collector to
base voltage
Collector to
2SC2405
2SC2406
2SC2405
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
5
100
50
200
150
鈥?5 ~ +150
Unit
+0.2
1.1
鈥?.1
2
V
emitter voltage 2SC2406
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
S
(2SC2405)
T
(2SC2406)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC2405
2SC2406
2SC2405
2SC2406
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 5V, I
E
= 鈥?mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CB
= 5V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
0.7
200
110
35
55
35
55
5
180
700
0.6
1
V
V
MHz
mV
min
typ
max
100
1
Unit
nA
碌A
V
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.1
0.4
鈥?.05
+0.1
s
Absolute Maximum Ratings
1.9鹵0.2
Low noise voltage NV.
High foward current transfer ratio h
FE
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
2.8
鈥?.3
0.65鹵0.15
+0.2
+0.25
1.5
鈥?.05
0.65鹵0.15
0.95
1
+0.2
0.95
3
1.45
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
h
FE
Rank classification
Rank
h
FE
R
180 ~ 360
SR
TR
S
260 ~ 520
SS
TS
T
360 ~ 700
ST
TT
Marking
Symbol
2SC2405
2SC2406
1
1
2
3
