Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
q
q
q
Features
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0鹵0.1
R
0.
0.85
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
3
15
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
BE
f
T
NF
PG
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 20V, I
B
= 0
V
EB
= 3V, I
C
= 0
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA
V
CE
= 6V, I
C
= 1mA
20
450
65
720
650
3.3
24
0.8
1
5
min
typ
max
100
10
1
260
mV
MHz
dB
dB
pF
Unit
nA
碌A(chǔ)
碌A(chǔ)
*
h
FE
Rank classification
C
65 ~ 160
D
100 ~ 260
h
FE
Rank
4.1鹵0.2
4.5鹵0.1
7
1