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2SC2334M Datasheet

  • 2SC2334M

  • TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB

  • 6頁

  • ETC

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DATA SHEET
SILICON POWER TRANSISTOR
2SC2334
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC2334 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
ORDERING INFORMATION
Part No.
2SC2334
Package
TO-220AB
FEATURES
鈥?Low collector saturation voltage
鈥?Fast switching speed
鈥?Complementary transistor: 2SA1010
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25擄C
T
A
= 25擄C
PW
鈮?/div>
300
碌
s,
duty cycle
鈮?/div>
10%
Conditions
Ratings
150
100
7.0
7.0
15
3.5
40
1.5
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14902EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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