Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1022
Unit: mm
s
Features
q
q
q
2.8
鈥?.3
0.65鹵0.15
+0.2
1.5
鈥?.05
+0.25
0.65鹵0.15
2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
C
EBO
I
C
P
C
T
j
T
stg
30
20
5
30
200
150
鈥?5 ~ +150
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
V
s
Electrical Characteristics
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CBO
h
FE*
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 5MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
70
150
250
2.8
22
0.9
4
50
1.5
min
typ
max
0.1
220
MHz
dB
鈩?/div>
pF
Unit
碌A
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
B
70 ~ 140
VB
C
110 ~ 220
VC
0 to 0.1
Ratings
Unit
0.1 to 0.3
0.4鹵0.2
0.8
(Ta=25藲C)
+0.2
1.1
鈥?.1
0.16
鈥?.06
+0.1
0.4
鈥?.05
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
+0.1
1.45
1
1
2
3
