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2SC2148 Datasheet

  • 2SC2148

  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

  • 8頁

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors
encapsulated into new hermetic stripline packages, "micro X".
These are designed for small signal amplifier, low noise amplifier,
and oscillator applications in the L to C band, and CML circuit use.
4.0 MIN.
PACKAGE DIMENSIONS
(Unit : mm)
1
0.5鹵0.05
0.1
鈭?.03
+0.06
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz
2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
4.0 MIN.
2
4.0 MIN.
4
3
0.5鹵0.05
2.55鹵0.2
蠁
2.1
1.8 MAX.
0.55
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200
擄C,
but the ambient or storage
temperature is limitted to 150
擄C.
The operating junction temperature is estimated with power consumption (P
T
) and
thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice.
Document No. P11809EJ2V0DS00 (2nd edition)
(Previous No. TC-1428)
Date Published August 1996 P
Printed in Japan
4.0 MIN.
45擄
漏
1981

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