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omponents
21201 Itasca Street Chatsworth
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2SC2001
Capable of 0.6Watts of Power Dissipation.
Collector-current 0. 7A
Collector-base Voltage 30V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
Pin Configuration
Bottom View
E
C
B
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=700mAdc, I
B
=70mAdc)
Base-Emitter Saturation Voltage
(I
C
=700mAdc, I
B
=70mAdc)
Transition Frequency
(V
CE
=6.0Vdc, I
C
=10mAdc, f=30MHz)
Min
25
30
5.0
---
----
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Adc
uAdc
Vdc
uAdc
D
90
---
---
50
400
0.6
1.2
---
---
Vdc
Vdc
G
MHz
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
(BE)sat
fT
DIMENSIONS
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
CLASSIFICATION OF H
FE
Rank
Range
M
90-180
L
135-270
K
200-400
DIM
A
B
C
D
E
G
MAX
.185
.185
---
.020
.145
.105
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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