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omponents
21201 Itasca Street Chatsworth
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2SC1959
Audio frequency low power amplifier applications, driver stage
amplifier applications, switching applications
Excellent h
FE
Linearity: h
FE(2)
=25(Min.) : V
CE
=6.0V, I
C
=400mA
1 Watt Amplifier applications
Complementary to 2SA562TM.
Power Silicon
NPN Transistor
TO-92
Pin Configuration
Bottom View
C
B
E
A
E
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Breakdown Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Operating Junction Temperature
Storage Temperature
Parameter
Collector-Base Cutoff Current
(V
CB
=35Vdc, I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
Rating
30
35
5.0
500
100
500
-55 to +150
-55 to +150
Min
---
---
Typ
---
---
Max
0.1
0.1
Unit
V
V
V
mA
mA
mW
O
C
O
C
Units
uAdc
uAdc
D
B
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
I
CBO
I
EBO
ON CHARACTERISTICS
DC Current Gain*
70
---
(I
C
=100mAdc, V
CE
=1.0Vdc)
h
FE-2
DC Current Gain*
25
---
(I
C
=400mAdc, V
CE
=6.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
---
0.1
(I
C
=100mAdc, I
B
=10mAdc)
V
BE
Base-Emitter Voltage
---
0.8
(I
C
=100mAdc, V
CE
=1.0Vdc)
f
T
Transition Frequency
---
300
(V
CE
=6.0Vdc, I
C
=20mAdc)
C
OBO
Collector Output Capacitance
--- 7.0
(V
CB
=6.0Vdc, I
E
=0, f=1.0MH
Z
)
Note: h
FE(1)
Classification O: 70~140, Y: 120~240, GR: 200~400
h
FE(1)
Classification O: 25 (Min.), Y: 40 (Min.)
h
FE-1
400
----
0.25
1.0
---
---
---
---
Vdc
INCHES
G
DIMENSIONS
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Vdc
M H
Z
pF
DIM
A
B
C
D
E
G
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
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