鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
I
C
=
2 A, I
B
=
0.2 A
I
C
=
2 A, I
B
=
0.2 A
V
CB
=
5 V, I
E
= 鈭?/div>
0.5 A, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
150
35
80
Min
50
40
1
100
10
220
1
1.5
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
80 to 160
R
120 to 220
16.0
鹵1.0
鈥?/div>
Output of 4 W can be obtained by a complementary pair with
2SA0886
鈥?/div>
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9
鹵0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
鹵0.1
鈻?/div>
Features
3.8
鹵0.3
11.0
鹵0.5
Publication date: February 2003
SJD00095BED
1
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