鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
200
20
85
50
0.5
V
MHz
pF
Min
45
35
0.1
100
10
340
Typ
Max
Unit
V
V
碌A
碌A
碌A
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
16.0
鹵1.0
鈥?/div>
Low collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Output of 3 W can be obtained by a complementary pair with
2SA0885
鈥?/div>
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9
鹵0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
鹵0.1
鈻?/div>
Features
11.0
鹵0.5
Publication date: February 2003
SJD00094BED
1
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