2SC1815(L)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815(L)
Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications
路
路
High breakdown voltage, high current capability
: V
CEO
= 50 V (min), I
C
= 150 mA (max)
Excellent linearity of h
FE
: h
FE (2)
= 100 (typ.) at V
CE
= 6 V, I
C
= 150 mA
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
路
路
Low noise: NF = 0.2dB (typ.) (f = 1 kHz).
Complementary to 2SA1015 (L). (O, Y, GR class).
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
50
400
125
-55~125
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Base intrinsic resistance
V
CE (sat)
V
BE (sat)
f
T
C
ob
r
bb鈥?/div>
NF (1)
Noise figure
NF (2)
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
V
CE
=
6 V, I
C
=
150 mA
I
C
=
100 mA, I
B
=
10 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
10 V, I
E
= -1
mA, f
=
30 MHz
V
CE
=
6 V, I
C
=
0.1 mA
R
G
=
10 kW, f
=
100 Hz
V
CE
=
6 V, I
C
=
0.1 mA
R
G
=
10 kW, f
=
1 kHz
Min
戮
戮
70
25
戮
戮
80
戮
戮
戮
Typ.
戮
戮
戮
100
0.1
戮
戮
2.0
50
0.5
Max
0.1
0.1
700
戮
0.25
V
1.0
戮
3.5
戮
6
dB
戮
0.2
3
MHz
pF
W
Unit
mA
mA
Note: h
FE (1)
classification
O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2003-03-27
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