2SC1590
Silicon NPN Transistor
RF Power Output
The 2SC1590 is a silicon NPN epitaxial planer type
transistor designed for 136-174MHz RF power amplifiers
on VHF band mobile radio applications.
WINTransceiver
BEC
Features:
High Power Gain: G
pe
>/= 10dB (V
CC
= 13.5V, P
O
= 6W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at:
V
CC
= 15.2V, P
O
= 6W, f = 175MHz
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector-Emitter Voltage (R
BE
= Infinity), V
CEO
Collector-Base Voltage, V
CBO
Emitter-Base Voltage, V
EBO
Collector Current, I
C
Collector Power Dissipation (T
A
= +25擄C), P
D
Collector Power Dissipation (T
C
= +50擄C), P
D
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction-to-Case, R
thJC
Thermal Resistance, Junction-to-Ambient, R
thJA
17V
35V
4V
12A
1.5W
12.5W
+150擄C
-55擄 to +150擄C
10擄C/W
83擄C/W
Electrical Characteristics: (T
C
= +25擄C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Power Output
Collector Efficiency
Symbol
Test Conditions
Min Typ Max Unit
35
17
4
-
-
10
6
60
-
-
-
-
-
50
7
70
-
-
-
V
V
V
V
(BR)CBO
I
C
= 10mA, I
E
= 0
V
(BR)CEO
I
C
= 50mA, R
BE
= Infinity
V
(BR)EBO
I
E
= 5mA, I
C
= 0
I
CBO
I
EBO
h
FE
P
O
V
CB
= 25V I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 100mA, Note 1
V
CC
= 13.5V, P
in
= 600mW, f =
175MHz
500 碌A(chǔ)
500 碌A(chǔ)
180
-
-
W
%
1
2
