Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA879
5.9鹵0.2
Unit: mm
4.9鹵0.2
q
q
High collector to emitter voltage V
CEO
.
High transition frequency f
T
.
+0.3
+0.2
Parameter
Collector to
base voltage
2SC1573
2SC1573A
2SC1573B
2SC1573
Collector to
emitter voltage
2SC1573A
2SC1573B
Symbol
Ratings
250
Unit
2.54鹵0.15
V
CBO
300
400
200
V
13.5鹵0.5
0.7
鈥?.2
s
Absolute Maximum Ratings
(Ta=25藲C)
0.7鹵0.1
8.6鹵0.2
s
Features
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
300
400
V
0.45
鈥?.1
1.27
1.27
0.45
鈥?.1
+0.2
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
100
70
1
150
鈥?5 ~ +150
mA
mA
W
藲C
藲C
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SC1573
2SC1573A
2SC1573B
2SC1573
2SC1573A
2SC1573B
(Ta=25藲C)
Symbol
I
CBO
V
CEO
Conditions
V
CB
= 12V, I
E
= 0
200
I
C
= 100碌A, I
B
= 0
300
400
5
V
EBO
h
FE*
V
CE(sat)
f
T
I
E
= 1碌A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
80
5
C
ob
4
10
8
pF
7
30
220
1.2
V
MHz
V
V
min
typ
max
2
Unit
碌A
Emitter to base
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output
capacitance
*
h
2SC1573
2SC1573A
2SC1573B
FE
Rank classification
P
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
*2SC1573 for Ranks Q and R only
3.2
Emitter to base voltage
7
V
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
1
1
2
3
