鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
2SC1567
2SC1567A
V
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
=
1
碌A(chǔ),
I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
5 V, I
C
=
500 mA
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Symbol
V
CEO
Conditions
I
C
=
100
碌A(chǔ),
I
B
=
0
Min
100
120
5
130
50
100
0.2
0.85
120
11
20
0.4
1.20
V
V
MHz
pF
330
V
錚?/div>
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
130 to 220
S
185 to 330
16.0
鹵1.0
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
鈥?/div>
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9
鹵0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
鹵0.1
鈻?/div>
Features
11.0
鹵0.5
Publication date: February 2003
SJD00092BED
1
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