Transistor
2SC1518
Silicon NPN epitaxial planer type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
5.9鹵0.2
Unit: mm
4.9鹵0.2
q
q
2.54鹵0.15
(Ta=25藲C)
Ratings
25
20
5
1.5
1
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
0.45
鈥?.1
1.27
1.27
+0.2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
s
Absolute Maximum Ratings
0.7
鈥?.2
+0.3
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances and high efficiency with a
low-voltage power supply.
0.7鹵0.1
8.6鹵0.2
s
Features
0.45
鈥?.1
+0.2
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 25V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
=
50mA
*2
150
12
*2
min
typ
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
max
100
1
Unit
nA
碌A(chǔ)
V
V
V
25
20
5
90
50
100
1.2
0.5
330
V
V
MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
S
185 ~ 330
Rank
h
FE1
1
1
2
3
