Transistor
2SC1509
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA777
5.9鹵0.2
Unit: mm
4.9鹵0.2
q
q
2.54鹵0.15
(Ta=25藲C)
Ratings
80
80
5
1
0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
0.45
鈥?.1
1.27
1.27
+0.2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5鹵0.5
s
Absolute Maximum Ratings
0.7
鈥?.2
+0.3
High collector to emitter voltage V
CEO
.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
0.7鹵0.1
8.6鹵0.2
s
Features
0.45
鈥?.1
+0.2
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 100碌A, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
80
80
5
130
50
100
0.2
0.85
120
11
*2
min
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC鈥?1
TO鈥?2L Package
typ
max
0.1
Unit
碌A
V
V
V
330
0.4
1.2
V
V
MHz
20
pF
Pulse measurement
*1
h
FE1
Rank classification
R
130 ~ 220
S
185 ~ 330
Rank
h
FE1
1
1
2
3
