Transistor
2SC1359
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA838
Unit: mm
5.0鹵0.2
4.0鹵0.2
s
Features
q
q
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
5
30
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
13.5鹵0.5
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CBO
h
FE*
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 5MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
70
150
250
2.8
22
0.9
4
50
1.5
min
typ
max
0.1
220
MHz
dB
鈩?/div>
pF
Unit
碌A(chǔ)
*
h
FE
Rank classification
B
70 ~ 140
C
110 ~ 220
h
FE
Rank
1
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