Transistor
2SC1047
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
s
Features
q
q
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
3
20
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
2.54鹵0.15
1 2 3
0.45
鈥?.1
1.27
+0.2
13.5鹵0.5
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
2.3鹵0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Noise figure
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE*
V
BE
C
re
f
T
PG
NF
Conditions
I
C
= 10碌A, I
E
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA
V
CE
= 6V, I
C
= 1mA, f = 10.7MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
450
20
3.3
5
min
30
3
40
0.72
0.8
650
1
260
V
pF
MHz
dB
dB
typ
max
Unit
V
V
*
h
FE
Rank classification
B
40 ~ 110
C
65 ~ 160
D
100 ~ 260
h
FE
Rank
1
1
2
3
