Power Transistors
www.jmnic.com
2SC1030
Silicon NPN Transistors
1B
2E
3C
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current-Continuous
Total Power Dissipation@TC=25
Junction temperature
Storage temperature
RATING
150
80
6
6
50
200
-55~200
UNIT
V
V
V
A
W
TO-3
Electrical Characteristics Tc=25
SYMBOL
V
CEO
V
CER
I
CEO
I
EBO
I
CBO
V
EBO
V
CE(sat-1)
V
CE(sat-2)
V
CE(sat-3)
h
FE-1
h
FE-2
h
FE-3
V
BE(on)
f
T
h
fe
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Base-emitter breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter On voltages
Current Gain-Bandwidth Product
Small-Signal Current Gain
I
C
=1A; V
CE
=5V
10
MHz
I
C
=1A; V
CE
=5V
I
C
=5A; V
CE
=5V
35
22
200
I
C
=5.0A; I
B
=1.0A
1.5
V
V
CE
=30V; I
B
=0
V
EB
=6V; I
C
=0
V
CB
=30V; I
E
=0
2.0
1.0
1.0
mA
mA
mA
CONDITIONS
I
C
=0.2A; I
B
=0
MIN
80
TYP
MAX
UNIT
V
JMnic
1
