鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*
Transition frequency
Reverse transfer capacitance
(Common emitter)
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
f
T
C
re
Z
rb
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A,
I
C
=
0
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
10.7 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
2 MHz
Min
30
20
5
70
150
230
1.3
1.6
60
250
Typ
Max
Unit
V
V
V
錚?/div>
MHz
pF
鈩?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
B
70 to 160
C
110 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00098CED
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