Transistor
2SB0976
(2SB976)
Silicon PNP epitaxial planer type
For low-frequency output amplification
For DC-DC converter
For stroboscope
5.0鹵0.2
Unit: mm
4.0鹵0.2
I
Features
G
G
I
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?7
鈥?8
鈥?
鈥?
鈥?
0.75
150
鈥?5 ~ +150
Unit
V
V
2.3鹵0.2
0.45
鈥?.1
1.27
+0.2
13.5鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Large collector current I
C
.
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
V
1 2 3
A
A
W
藲C
藲C
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
I
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?A, I
B
= 鈥?.1A
*2
V
CB
= 鈥?V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?8
鈥?
125
鈥?0.4
120
60
*2
min
typ
max
鈥?00
鈥?
Unit
nA
碌A(chǔ)
V
V
625
鈥?
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
Q
125 ~ 205
R
180 ~ 625
Rank
h
FE
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
