Power Transistors
2SB948, 2SB948A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1445 and 2SD1445A
0.7鹵0.1
Unit: mm
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
蠁3.1鹵0.1
1.4鹵0.1
1.3鹵0.2
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
1
2
3
4.2鹵0.2
s
Features
q
q
q
16.7鹵0.3
14.0鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?0
鈥?0
40
2
150
鈥?5 to +150
Unit
V
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB948
2SB948A
2SB948
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SB948A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
Solder Dip
4.0
7.5鹵0.2
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SB948
2SB948A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
I
C
= 鈥?A, I
B1
= 鈥?0.1A, I
B2
= 0.1A
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0.1A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?0A, I
B
= 鈥?0.33A
I
C
= 鈥?0A, I
B
= 鈥?0.33A
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 10MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
100
400
0.1
0.5
0.1
鈥?0
鈥?0
45
90
260
鈥?0.6
鈥?.5
V
V
MHz
pF
碌s
碌s
碌s
min
typ
max
鈥?0
鈥?0
Unit
碌A(chǔ)
碌A(chǔ)
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
1
2
3
