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2SB942A Datasheet

  • 2SB942A

  • For Low-Frequency Power Amplification

  • 3頁

  • PANASONIC

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Power Transistors
2SB0942
(2SB942)
, 2SB0942A
(2SB942A)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267, 2SD1267A
鈻?/div>
Features
16.7
鹵0.3
0.7
鹵0.1
Unit: mm
10.0
鹵0.2
5.5
鹵0.2
4.2
鹵0.2
4.2
鹵0.2
2.7
鹵0.2
鈥?/div>
High forward current transfer ratio h
FE
which has satisfactory linearity
鈥?/div>
Large collector-emitter saturation voltage V
CE(sat)
鈥?/div>
Full-pack package which can be installed to the heat sink with one screw
7.5
鹵0.2
蠁
3.1
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SB0942
2SB0942A
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
Rating
鈭?0
鈭?0
鈭?0
鈭?0
鈭?
鈭?
鈭?
40
2
150
鈭?5
to
+150
擄C
擄C
V
A
A
W
1 2 3
Unit
V
Solder Dip
(4.0)
14.0
鹵0.5
1.4
鹵0.1
1.3
鹵0.2
0.5
+0.2
鈥?.1
0.8
鹵0.1
Collector-emitter voltage 2SB0942
(Base open)
2SB0942A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
V
2.54
鹵0.3
5.08
鹵0.5
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter
cutoff current (E-B short)
2SB0942
2SB0942A
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
2SB0942
2SB0942A
V
BE
I
CES
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?0
V, V
BE
=
0
V
CE
= 鈭?0
V, V
BE
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.4 A
V
CE
= 鈭?0
V, I
C
= 鈭?/div>
0.1 A, f
=
10 MHz
I
C
= 鈭?
A, I
B1
= 鈭?/div>
0.4 A, I
B2
=
0.4 A
V
CC
= 鈭?0
V
30
0.2
0.5
0.2
40
15
鈭?.5
V
MHz
碌s
碌s
碌s
Symbol
V
CEO
Conditions
I
C
= 鈭?0
mA, I
B
=
0
Min
鈭?0
鈭?0
鈭?
鈭?00
鈭?00
鈭?00
鈭?
250
碌A(chǔ)
mA
錚?/div>
V
碌A(chǔ)
Typ
Max
Unit
V
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
40 to 90
Q
70 to 150
P
120 to 250
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00022BED
1

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