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2SB906_07 Datasheet

  • 2SB906_07

  • Audio Frequency Power Amplifier Application

  • 4頁

  • TOSHIBA

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2SB906
TOSHIBA Transistor
Silicon PNP Diffused Type (PCT process)
2SB906
Audio Frequency Power Amplifier Application
鈥?/div>
鈥?/div>
鈥?/div>
Low collector saturation voltage
: V
CE (sat)
=
鈭?.0
V (typ.) (I
C
=
鈭?
A, I
B
=
鈭?.3
A)
High power dissipation: P
C
= 20 W (Tc = 25擄C)
Complementary to 2SD1221
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25擄C
Tc = 25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?
鈭?
鈭?.5
1.0
20
150
鈭?5
to 150
Unit
V
V
V
A
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7B1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7J1A
Weight: 0.36 g (typ.)
1
2006-11-21

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