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2SB905_07 Datasheet

  • 2SB905_07

  • Power Amplifier Applications

  • 155.24KB

  • 5頁

  • TOSHIBA

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2SB905
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SB905
Power Amplifier Applications
鈥?/div>
Complementary to SD1220
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25擄C
Tc = 25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
鈭?50
鈭?50
鈭?
鈭?.5
鈭?.0
1.0
10
150
鈭?5
to 150
Unit
V
V
V
A
A
W
擄C
擄C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7J1A
Weight: 0.36 g (typ.)
1
2006-11-21

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