2SB834
PNP
EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
!
Complement to 2SD880
ABSOLUTE MAXIMUM RATINGS (T
a
=25擄C)
C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation(Tc=25擄C)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
-60
-60
-7
-3
30
150
-50~150
Unit
V
V
V
A
W
擄C
擄C
ELECTRICAL CHARACTERISTICS (Ta=25擄C)
C
Characterristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
Test Condition
VCB= -60V , IE=0
VEB= -7V, IC=0
VCE= -5V, IC=-0.5A
VCE= -5V, IC=-3A
IC=-3A , IB=-0.3A
VCE= -5V , IC=-0.5A
Min
Typ
Max
-100
-100
300
Unit
碌A(chǔ)
碌A(chǔ)
60
20
-0.4
9
-1.0
V
MHZ
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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