DC COMPONENTS CO., LTD.
R
2SB772D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter
2 = Collector
3 = Base
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.060(1.52)
.050(1.27)
TO-126ML
.146(3.70)
.136(3.44)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Total Power Dissipation(T
C
=25 C)
Total Power Dissipation(T
A
=25 C)
Junction Temperature
Storage Temperature
o
o
.148(3.75)
.138(3.50)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
D
P
D
T
J
T
STG
Rating
-40
-30
-5
-3
-7
-0.6
10
1
+150
-55 to +150
Unit
V
V
V
A
A
A
W
W
o
o
.180
Typ
(4.56)
.090
Typ
(2.28)
Dimensions in inches and (millimeters)
.591(15.0)
.551(14.0)
.056(1.42)
.046(1.17)
.033(0.84)
.027(0.68)
.300(7.62)
.290(7.37)
1 2 3
.084(2.12)
.074(1.87)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.027(0.69)
.017(0.43)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
380碌s, Duty Cycle
2%
(1)
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
-0.3
-1
-
200
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
-
-
MHz
pF
Test Conditions
I
C
=-100碌A(chǔ)
I
C
=-1mA
I
E
=-10碌A(chǔ)
V
CB
=-30V
V
EB
=-3V
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-20mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V
I
C
=-0.1A, V
CE
=-5V
I
E
=0, V
CB
=-10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
Classification of h
FE2
Rank
Range
Q
100~200
P
160~320
E
200~400
1
