Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
Unit: mm
5.0鹵0.2
5.1鹵0.2
4.0鹵0.2
s
Features
q
q
High foward current transfer ratio h
FE
.
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?00
250
150
鈥?5 ~ +150
Unit
V
V
V
13.5鹵0.5
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
mA
mW
藲C
藲C
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CB
= 鈥?V, I
E
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
V
CB
= 鈥?V, I
E
= 2mA, f = 200MHz
鈥?
150
鈥?0
鈥?0
鈥?
180
700
鈥?0.6
鈥?.2
V
V
MHz
min
typ
max
鈥?00
鈥?
Unit
nA
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
h
FE
Rank
1
1
2
