DC COMPONENTS CO., LTD.
R
2SB564A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
o
C)
Rating
-30
-25
-5
-1
800
+150
-55 to +150
Unit
V
V
V
A
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
Symbol
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
(1)
Min
-30
-25
-5
-
-
-
70
-
-
2%
Typ
-
-
-
-
-
-
-
110
18
Max
-
-
-
-100
-0.5
-1.2
400
-
-
Unit
V
V
V
nA
V
V
-
MHz
pF
Test Conditions
I
C
=-100碌A(chǔ), I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100碌A(chǔ), I
C
=0
V
CB
=-30V, I
E
=0
I
C
=-1A, I
B
=-100mA
I
C
=-1A, I
B
=-100mA
I
C
=-100mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-6V, f=100MHz
V
CB
=-6V, f=1MHz
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380碌s, Duty Cycle
Classification of h
FE
Rank
Range
O
70~140
Y
120~240
GR
200~400
1
