2SB1705
Transistors
Low frequency amplifier
2SB1705
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
Each lead has same dimensions
0.4
1.0MAX
0.85
0.7
Features
1) A collector current is large.
2) V
CE(sat)
鈮?鈭?50mV
At I
C
=鈭?.5A / I
B
=鈭?0mA
(3)
2.8
1.6
0~0.1
(1)
(2)
0.95 0.95
1.9
2.9
0.16
Abbreviated symbol: XW
(1) Base
ROHM : TSMT3
2SB1705
(2) Emitter
(3) Collector
Absolute maximum ratings
(Ta=25擄C)
Limits
Symbol
鈭?5
V
CBO
鈭?2
V
CEO
Collector-emitter voltage
鈭?
V
EBO
Emitter-base voltage
鈭?
I
C
Collector current
鈭?
I
CP
500
P
C
Power dissipation
Junction temperature
Tj
150
Range of storage temperature
Tstg
鈭?5
to
+150
Parameter
Collector-base voltage
鈭?
Single pulse, P
W
=1ms
鈭?
Each Termminal Mounted on a Recommended
Equivalent circuit
Unit
V
V
V
A
A
鈭?
mW
鈭?
擄C
擄C
(3)
(1)
(2)
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?5
鈭?2
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?20
鈭?/div>
280
30
Max.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?00
鈭?00
鈭?50
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
Conditions
I
C
= 鈭?0碌A(chǔ)
I
C
= 鈭?mA
I
E
= 鈭?0碌A(chǔ)
V
CB
= 鈭?5V
V
EB
= 鈭?V
I
C
= 鈭?.5A,
I
B
= 鈭?0mA
V
CE
= 鈭?V,
I
C
= 鈭?00mA
鈭?/div>
V
CE
= 鈭?V,
I
E
=500mA,
f=100MHz
鈭?/div>
V
CB
= 鈭?0V,
I
E
=0A,
f=1MHz
0.3
~0.6
Rev.B
1/2
2SB1705TL 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
3A
12V
250mV @ 30mA，1.5A
-
270 @ 500mA，2V
500mW
280MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
TSMT3
帶卷 (TR)
2SB1705TL-ND2SB1705TLTR
2SB1705TL相關(guān)型號(hào)PDF文件下載
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