2SB1695
Transistors
Low frequency amplifier
2SB1695
Application
Low frequency amplifier
Driver
External dimensions
(Units : mm)
Each lead has same dimensions
0.4
1.0MAX
0.85
0.7
Features
1) A collector current is large.
2) V
CE(sat)
鈮も垝370mV
at I
C
=鈭?A / I
B
=鈭?0mA
(3)
2.8
1.6
0~0.1
(1)
(2)
0.95 0.95
1.9
2.9
0.16
Abbreviated symbol:FL
ROHM : TSMT3
0.3
~0.6
(1) Base
(2) Emitter
(3) Collector
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
I
C
Collector current
I
CP
P
C
Power dissipation
Junction temperature
Tj
Range of storage temperature
Tstg
鈭桽ingle
pulse, P
W
=1ms
Packaging specifications
Limits
鈭?0
鈭?0
鈭?
鈭?.5
鈭?
500
150
鈭?5~+150
Unit
V
V
V
A
A
鈭?/div>
mW
擄C
擄C
Package
Type
Code
Basic ordering unit (pieces)
2SB1695
Taping
TL
3000
Parameter
Collector-base voltage
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?0
鈭?0
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?00
鈭?/div>
280
13
Max.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?00
鈭?00
鈭?70
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
Conditions
I
C
=鈭?0碌A(chǔ)
I
C
=鈭?mA
I
E
=鈭?0碌A(chǔ)
V
CB
=鈭?0V
V
EB
=鈭?V
I
C
=鈭?A,
I
B
=鈭?0mA
V
CE
=鈭?V,
I
C
=鈭?00mA
鈭?/div>
V
CE
=鈭?V,
I
E
=100mA,
f=100MHz
鈭?/div>
V
CB
=鈭?0V,
I
E
=0A,
f=1MHz
1/2
2SB1695TL 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
1.5A
30V
370mV @ 50mA，1A
-
270 @ 100mA，2V
500mW
280MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
TSMT3
帶卷 (TR)
2SB1695TL-ND2SB1695TLTR
2SB1695TL相關(guān)型號PDF文件下載
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