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2SB1693 Datasheet

  • 2SB1693

  • Silicon PNP epitaxial planer type

  • 3頁

  • PANASONIC

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Transistors
2SB1693
Silicon PNP epitaxial planar type
For general amplification
鈻?/div>
Features
鈥?/div>
Large collector current I
C
鈥?/div>
Mini type package, allowing downsizing of the equipment and auto-
matic insertion through the tape packing and the magazine packing
1
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?0
鈭?0
鈭?5
鈭?/div>
0.5
鈭?
200
150
鈭?5
to
+150
Unit
V
V
V
A
A
mW
擄C
擄C
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 3D
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
*
Symbol
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?/div>
0.5 A, I
B
= 鈭?5
mA
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *: Pulse measurement
V
CB
= 鈭?
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?0
鈭?0
鈭?5
160
100
鈭?0
鈭?10
170
16
鈭?00
鈭?00
MHz
pF
mV
560
Typ
Max
Unit
V
V
V
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0 to 0.1
0.4
鹵0.2
5藲
Publication date: September 2003
SJC00292AED
1

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