2SB1674
Transistors
Power Transistor (鈭?20V,
鈭?A)
2SB1674
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2615.
!
External dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
-120
-120
-6
-6
-10
2
30
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25藲C)
藲C
藲C
14.0
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
*
*
Single pulse, P
W
=10ms
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SB1674
TO-220FN
2k~20k
-
500
!
Circuit diagram
C
B
R
1
R
1
R
2
5.0k鈩?/div>
300鈩?/div>
R
2
E
B : Base
C : Collector
E : Emitter
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
-120
-120
-
-
-
2k
-
-
Typ.
-
-
-
-
-
-
12
70
Max.
-
-
-100
-3
-1.5
20k
-
-
Unit
V
V
碌A(chǔ)
mA
V
-
MHz
pF
I
C
=-50碌A(chǔ)
I
C
=-5mA
V
CB
=-120V
V
EB
=-5V
I
C
/I
B
=-3A/-6mA
V
CE
/I
C
=-3V/-2A
V
CE
=-5V , I
E
=0.5A , f=10MHz
V
CB
=-10V , I
E
=0A , f=1MHz
*1
*1
*2
Conditions
Transition frequency
Output capacitance
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
1
