2SB1668
Transistors
Power Transistor (鈭?00V,
鈭?A)
2SB1668
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2607.
!External
dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
鈭?/div>
Single pulse,
Pw = 100ms
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
鈭?00
鈭?00
鈭?
鈭?
鈭?0
2
30
150
鈭?5 鈭?/div>
+150
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc = 25擄C)
擄C
擄C
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
鈭?/div>
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SB1668
TO-220FN
1k~20k
-
500
!Circuit
diagram
B
C
R
1
R1 5k鈩?/div>
R2 300k鈩?/div>
R
2
E
B : Base
C : Collector
E : Emitter
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
鈭?/div>
1 Measured using pulse current.
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
鈭?00
鈭?00
鈭?/div>
鈭?/div>
鈭?/div>
1000
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?.0
10000
12
90
Max.
鈭?/div>
鈭?/div>
鈭?0
鈭?
鈭?.5
20000
鈭?/div>
鈭?/div>
Unit
V
V
碌A(chǔ)
mA
V
鈭?/div>
MHz
pF
I
C
=
鈭?0碌A(chǔ)
I
C
=
鈭?mA
V
CB
=
鈭?00V
Conditions
V
EB
=
鈭?V
I
C
/I
B
=
鈭?A/鈭?mA
V
CE
/I
C
=
鈭?V/鈭?A
V
CE
=
鈭?V
, I
E
= 0.5A , f = 10MHz
V
CB
=
鈭?0V
, I
E
= 0A , f = MHz
鈭?/div>
1
鈭?/div>
1
鈭?/div>
2
鈭?/div>
2 Transition frequency of the device.
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