2SB1668
Transistors
For Power amplification (鈭?00V,
鈭?A)
2SB1668
Structure
PNP Silicon Epitaxial Planar Transistor
(Darlington connection)
External dimensions
(Unit : mm)
TO-220FN
10.0
4.5
蠁
3.2
2.8
Features
1) High h
FE
by darlington connection.
2) Built-in resistors between base and emitter.
3) Damper diode is incorporated.
(1)Base
(2)Collector
(3)Emitter
15.0
12.0
8.0
5.0
1.2
1.3
14.0
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications
Relay drive
Motor drive
Complements
PNP
2SB1668
NPN
2SD2607
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
鈭?
t=100ms
Packaging specifications and h
FE
Limits
鈭?00
鈭?00
鈭?
鈭?
鈭?0
2
30
150
Unit
V
V
V
A
A
鈭?
Symbol
V
CBO
V
CEO
V
EBO
DC
Pulse
I
C
I
CP
P
C
Tj
Tstg
Package
Type
2SB1668
Code
Basic ordering unit (pieces)
Taping
鈭?/div>
500
W(Ta=25擄C)
W(Tc=25擄C)
擄C
擄C
鈭?5
to
+150
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min. Typ. Max. Unit
鈭?00
鈭?00
鈭?
鈭?/div>
鈭?/div>
鈭?/div>
1
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
12
90
鈭?/div>
鈭?/div>
鈭?/div>
鈭?0
鈭?
1.5
20
鈭?/div>
鈭?/div>
V
V
V
碌A(chǔ)
mA
V
K
pF
I
C
=鈭?mA
I
C
=鈭?0碌A(chǔ)
I
E
=鈭?mA
V
CB
=鈭?00V
V
EB
=鈭?V
I
C
/I
B
=鈭?A /鈭?mA
V
CE
=鈭?V, I
C
=鈭?A
V
CB
=鈭?0V, I
E
=0A, f=1MHz
Conditions
MHz V
CE
=鈭?V, I
E
=0.5A, f=10MHz
1/1
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