Power Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
7.5鹵0.2
Unit: mm
4.5鹵0.2
10.8鹵0.2
s
Features
q
q
q
3.8鹵0.2
High collector to emitter V
CEO
Low collector to emitter saturation voltage V
CE(sat)
Allowing automatic insertion with radial taping
(T
C
=25藲C)
Ratings
鈥?00
鈥?00
鈥?
鈥?
鈥?0.5
1.5
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
90擄
0.65鹵0.1
0.85鹵0.1
2.5鹵0.1
1.0鹵0.1
0.8C
0.8C
0.7鹵0.1
0.7鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
16.0鹵1.0
s
Absolute Maximum Ratings
0.5鹵0.1
2.5鹵0.2
0.8C
2.5鹵0.2
0.4鹵0.1
2.05鹵0.2
1
2
3
1:Emitter
2:Collector
3:Base
MT3 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 鈥?00V, I
E
= 0
V
CE
= 鈥?00V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?0mA
V
CE
= 鈥?V, I
C
= 鈥?00mA
I
C
= 鈥?00mA, I
B
= 鈥?0mA
V
CE
= 鈥?00mA, I
B
= 鈥?0mA
V
CB
= 鈥?0V, I
E
= 0.2A, f = 1MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
I
C
= 鈥?00mA,
I
B1
= 鈥?0mA, I
B2
= 10mA,
V
CC
= 鈥?50V, R
L
= 1.5k鈩?/div>
鈥?00
80
10
鈥?0.25
鈥?0.8
20
25
1.0
0.8
1.0
50
鈥?0.5
鈥?.2
V
V
MHz
pF
碌s
碌s
碌s
280
min
typ
max
鈥?
鈥?
鈥?
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
*
h
FE1
Rank classification
P
80 to 160
Q
130 to 280
Rank
h
FE1
1
1
2
